国際会議


 査読あり
  1. Shohiro Sho, Shinji Odanaka, and Akira Hiroki,
    “A simulation study of short channel effects with a Fermi-Dirac statistics based QET model for Si, Ge and III-V MOSFETs”,
    Proceedings of 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2015), pp. 229-232, Bologna, Italy, 2015

  2. Shohiro Sho, Shinji Odanaka, and Akira Hiroki,
    “Analysis of carrier transport in Si and Ge MOSFETs including quantum confinement and hot carrier effects”,
    Proceedings of 16th International Workshop on Computational Electronics (IWCE 2013), pp. 160-161, Nara, Japan, 2013

  3. Shohiro Shoand Shinji Odanaka,
    “Numerical methods for a quantum energy transport model arising in scaled MOSFETs”,
    Proceedings of 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2011), pp. 303-306, Osaka, Japan, 2011

 査読なし
  1. Shohiro Sho
    “A parallel semiconductor device simulation on SX-ACE”,
    NEC user group meeting, Osaka university, 2016

  2. Shohiro Sho
    “Semiconductor simulation based on a parallel domain decomposition method”,
    The 23rd Workshop on Sustained Simulation Performance (WSSP23), Tohoku university, 2016

  3. (招待講演) Shohiro Sho
    “A simulation study of short channel effects with a Fermi-Dirac statistics based QET model for Si, Ge and III-V MOSFETs”,
    Current Topics in Nano Simulations (CT-NanoSim 2015), Tsukuba, Japan, 2015

  4. (招待講演) Shohiro Sho,Shinji Odanaka, Yoshinori Oda, Kazuya Matuzawa, Yutaka Akiyama
    “A hybrid MPI/OpenMP parallelization for semiconductor device simulations”,
    Proceedings of International Workshop on Eigenvalue Problems: Algorithms, Software and Applications, in Petascale Computing (EPASA 2015), p. 10, Tsukuba, Japan, 2015

  5. Shohiro Sho,
    “A quantum energy transport model for high mobility MOSFETs simulation”,
    Proceedings of Osaka University-NCTU Joint Workshop on Modeling and Simulation of Semiconductor Devices, pp. 43-44, Hsinchu, Taiwan, 2015

 Tutorial


  1. Shohiro Sho
    “Recent progress in quantum hydrodynamic simulation for high mobility MOSFETs”,
    Internatinal Conference on Solid State Devices and Matrials, 2016